Damage and strain in epitaxial Ge0.10Si0.90 after Si implantation from 40 to 150°C

A. Vantomme, J. H. Song, D. Y.C. Lie, F. H. Eisen, M. A. Nicolet, T. K. Carns, K. L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Fingerprint

Dive into the research topics of 'Damage and strain in epitaxial Ge<sub>0.10</sub>Si<sub>0.90</sub> after Si implantation from 40 to 150°C'. Together they form a unique fingerprint.

Physics & Astronomy

Chemistry

Engineering & Materials Science