Damage and strain in epitaxial Ge0.10Si0.90 after Si implantation from 40 to 150°C

A. Vantomme, J. H. Song, D. Y.C. Lie, F. H. Eisen, M. A. Nicolet, T. K. Carns, K. L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The damage and strain produced in a nearly pseudomorphic Ge0.1 Si0.90 film on Si(100) by implantation of 320 keV28Si+ ions at 40 to 150°C and doses from 1 to 30 x 1014/cm2 have been measured by MeV4He channeling spectrometry and high resolution x-ray diffractometry. Both the implantation-induced damage and strain are sensitive to the implantation temperatures. The damage as characterized by channeling decreases with the temperature of implantation for all doses and becomes minimal at 150°C. The implantation-induced perpendicular strain does likewise, but an excess of about 6% of its intrinsic strain remains at the strain maximum even at 150°C.

Original languageEnglish
Title of host publicationGrowth, Processing, and Characterization of Semiconductor Heterostructures
PublisherPubl by Materials Research Society
Pages121-126
Number of pages6
ISBN (Print)1558992251
StatePublished - 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume326
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

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    Vantomme, A., Song, J. H., Lie, D. Y. C., Eisen, F. H., Nicolet, M. A., Carns, T. K., & Wang, K. L. (1994). Damage and strain in epitaxial Ge0.10Si0.90 after Si implantation from 40 to 150°C. In Growth, Processing, and Characterization of Semiconductor Heterostructures (pp. 121-126). (Materials Research Society Symposium Proceedings; Vol. 326). Publ by Materials Research Society.