@inproceedings{ee6ee556586d444fb1e86cbb4a013d6f,
title = "Damage and strain in epitaxial Ge0.10Si0.90 after Si implantation from 40 to 150°C",
abstract = "The damage and strain produced in a nearly pseudomorphic Ge0.1 Si0.90 film on Si(100) by implantation of 320 keV28Si+ ions at 40 to 150°C and doses from 1 to 30 x 1014/cm2 have been measured by MeV4He channeling spectrometry and high resolution x-ray diffractometry. Both the implantation-induced damage and strain are sensitive to the implantation temperatures. The damage as characterized by channeling decreases with the temperature of implantation for all doses and becomes minimal at 150°C. The implantation-induced perpendicular strain does likewise, but an excess of about 6% of its intrinsic strain remains at the strain maximum even at 150°C.",
author = "A. Vantomme and Song, {J. H.} and Lie, {D. Y.C.} and Eisen, {F. H.} and Nicolet, {M. A.} and Carns, {T. K.} and Wang, {K. L.}",
year = "1994",
language = "English",
isbn = "1558992251",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "121--126",
booktitle = "Growth, Processing, and Characterization of Semiconductor Heterostructures",
note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 02-12-1993",
}