Current injection emitters at 1.54 μm based on erbium doped GaN p-i-n structures

I. Wen Feng, Jing Li, Jingyu Lin, Hongxing Jiang, John Zavada

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

GaN:Er p-i-n structures were prepared by metal organic chemical vapor deposition with GaN:Er active layers grown at various pressures. The effect of GaN:Er growth pressure on the performance of these p-i-n structures was studied.

Original languageEnglish
Title of host publicationAdvances in Optical Materials, AIOM 2012
PublisherOptical Society of America (OSA)
PagesITh5B.2
ISBN (Print)9781557529336
DOIs
StatePublished - 2012
EventAdvances in Optical Materials, AIOM 2012 - San Diego, CA, United States
Duration: Feb 1 2012Feb 3 2012

Publication series

NameAdvances in Optical Materials, AIOM 2012

Conference

ConferenceAdvances in Optical Materials, AIOM 2012
CountryUnited States
CitySan Diego, CA
Period02/1/1202/3/12

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