Current injection emitters at 1.54 μm based on erbium doped GaN p-i-n structures

I. Wen Feng; Jing Li; Jingyu Lin; Hongxing Jiang; John Zavada

doi:10.1364/aiom.2012.ith5b.2

Current injection emitters at 1.54 μm based on erbium doped GaN p-i-n structures

I. Wen Feng, Jing Li, Jingyu Lin, Hongxing Jiang, John Zavada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

GaN:Er p-i-n structures were prepared by metal organic chemical vapor deposition with GaN:Er active layers grown at various pressures. The effect of GaN:Er growth pressure on the performance of these p-i-n structures was studied.

Original language	English
Title of host publication	Advances in Optical Materials, AIOM 2012
Publisher	Optical Society of America (OSA)
Pages	ITh5B.2
ISBN (Print)	9781557529336
DOIs	https://doi.org/10.1364/aiom.2012.ith5b.2
State	Published - 2012
Event	Advances in Optical Materials, AIOM 2012 - San Diego, CA, United States Duration: Feb 1 2012 → Feb 3 2012

Publication series

Name	Advances in Optical Materials, AIOM 2012

Conference

Conference	Advances in Optical Materials, AIOM 2012
Country/Territory	United States
City	San Diego, CA
Period	02/1/12 → 02/3/12

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10.1364/aiom.2012.ith5b.2

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@inproceedings{d2fbbfc67b124064bbdac1d52907ee59,

title = "Current injection emitters at 1.54 μm based on erbium doped GaN p-i-n structures",

abstract = "GaN:Er p-i-n structures were prepared by metal organic chemical vapor deposition with GaN:Er active layers grown at various pressures. The effect of GaN:Er growth pressure on the performance of these p-i-n structures was studied.",

author = "Feng, {I. Wen} and Jing Li and Jingyu Lin and Hongxing Jiang and John Zavada",

year = "2012",

doi = "10.1364/aiom.2012.ith5b.2",

language = "English",

isbn = "9781557529336",

series = "Advances in Optical Materials, AIOM 2012",

publisher = "Optical Society of America (OSA)",

pages = "ITh5B.2",

booktitle = "Advances in Optical Materials, AIOM 2012",

note = "Advances in Optical Materials, AIOM 2012 ; Conference date: 01-02-2012 Through 03-02-2012",

}

Feng, IW, Li, J , Lin, J , Jiang, H & Zavada, J 2012, Current injection emitters at 1.54 μm based on erbium doped GaN p-i-n structures. in Advances in Optical Materials, AIOM 2012. Advances in Optical Materials, AIOM 2012, Optical Society of America (OSA), pp. ITh5B.2, Advances in Optical Materials, AIOM 2012, San Diego, CA, United States, 02/1/12. https://doi.org/10.1364/aiom.2012.ith5b.2

TY - GEN

T1 - Current injection emitters at 1.54 μm based on erbium doped GaN p-i-n structures

AU - Feng, I. Wen

AU - Li, Jing

AU - Lin, Jingyu

AU - Jiang, Hongxing

AU - Zavada, John

PY - 2012

Y1 - 2012

N2 - GaN:Er p-i-n structures were prepared by metal organic chemical vapor deposition with GaN:Er active layers grown at various pressures. The effect of GaN:Er growth pressure on the performance of these p-i-n structures was studied.

AB - GaN:Er p-i-n structures were prepared by metal organic chemical vapor deposition with GaN:Er active layers grown at various pressures. The effect of GaN:Er growth pressure on the performance of these p-i-n structures was studied.

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U2 - 10.1364/aiom.2012.ith5b.2

DO - 10.1364/aiom.2012.ith5b.2

M3 - Conference contribution

AN - SCOPUS:84890751363

SN - 9781557529336

T3 - Advances in Optical Materials, AIOM 2012

SP - ITh5B.2

BT - Advances in Optical Materials, AIOM 2012

PB - Optical Society of America (OSA)

T2 - Advances in Optical Materials, AIOM 2012

Y2 - 1 February 2012 through 3 February 2012

ER -

Current injection emitters at 1.54 μm based on erbium doped GaN p-i-n structures

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