Current injection 1.54 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells

TM Al tahtamouni, Jing Li, Jingyu Lin, Hongxing Jiang

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)3476
JournalOptical Materials Express
StatePublished - Oct 2016

Fingerprint Dive into the research topics of 'Current injection 1.54 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells'. Together they form a unique fingerprint.

Cite this