Current injection 1.54 μm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells

We report on the growth, fabrication and electroluminescence (EL) characteristics of light-emitting diodes (LEDs) based on Er-doped GaN (GaN:Er) and GaN/AlGaN multiple quantum well (MQW:Er) active layers. The LED structures were grown using metal organic chemical vapor deposition and processed into 300x300 μm² mesa devices. The LEDs exhibit emission at 1.54 μm, due to Er intra-4f transitions, under forward bias conditions. The 1.54 μm emission properties from LEDs with MQWs:Er and GaN:Er active layers were probed. The LEDs fabricated using MQWs:Er exhibited improved performance as evidenced by a factor of 4 enhancement in the optical power output as compared to conventional GaN:Er based LEDs. The results demonstrate a significant advance in the development of current injected, chip-scale emitters and waveguide amplifiers based on Er doped semiconductors.