Current-injected 1.54 μm light emitting diodes based on erbium-doped GaN

R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, J. M. Zavada

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

Current-injected 1.54 μm emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365 nm nitride light emitting diodes. It was found that the 1.54 μm emission intensity increases almost linearly with input forward current. The results represent a step toward demonstrating the feasibility for achieving electrically pumped optical amplifiers for optical communication that possess advantages of both semiconductor optical amplifiers and Er-doped fiber amplifiers.

Original languageEnglish
Article number033502
JournalApplied Physics Letters
Volume93
Issue number3
DOIs
StatePublished - 2008

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