Original language | English |
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Pages (from-to) | 033502 |
Journal | Appl. Phys. Lett. |
State | Published - Jul 21 2008 |
Current-injected 1.54 µm light emitting diodes based on erbium-doped GaN
R. Dahal, C. Ugolini, Jingyu Lin, Hongxing Jiang, J. M. Zavada
Research output: Contribution to journal › Article › peer-review