Current-injected 1.54 µm light emitting diodes based on erbium-doped GaN

R. Dahal, C. Ugolini, Jingyu Lin, Hongxing Jiang, J. M. Zavada

Research output: Contribution to journal › Article › peer-review

Cite this

@article{57548dc2495447168bc8d5ccb594b24c,

title = "Current-injected 1.54 µm light emitting diodes based on erbium-doped GaN",

author = "R. Dahal and C. Ugolini and Jingyu Lin and Hongxing Jiang and Zavada, {J. M.}",

year = "2008",

month = jul,

day = "21",

language = "English",

pages = "033502",

journal = "Appl. Phys. Lett.",

publisher = "AIP",

}