Current-injected 1.54 μm light emitting diodes based on erbium-doped GaN

R. Dahal; C. Ugolini; J. Y. Lin; H. X. Jiang; J. M. Zavada

doi:10.1063/1.2955834

Current-injected 1.54 μm light emitting diodes based on erbium-doped GaN

R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, J. M. Zavada

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Current-injected 1.54 μm emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365 nm nitride light emitting diodes. It was found that the 1.54 μm emission intensity increases almost linearly with input forward current. The results represent a step toward demonstrating the feasibility for achieving electrically pumped optical amplifiers for optical communication that possess advantages of both semiconductor optical amplifiers and Er-doped fiber amplifiers.

Original language	English
Article number	033502
Journal	Applied Physics Letters
Volume	93
Issue number	3
DOIs	https://doi.org/10.1063/1.2955834
State	Published - 2008

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10.1063/1.2955834

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title = "Current-injected 1.54 μm light emitting diodes based on erbium-doped GaN",

abstract = "Current-injected 1.54 μm emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365 nm nitride light emitting diodes. It was found that the 1.54 μm emission intensity increases almost linearly with input forward current. The results represent a step toward demonstrating the feasibility for achieving electrically pumped optical amplifiers for optical communication that possess advantages of both semiconductor optical amplifiers and Er-doped fiber amplifiers.",

author = "R. Dahal and C. Ugolini and Lin, {J. Y.} and Jiang, {H. X.} and Zavada, {J. M.}",

note = "Funding Information: This research was partially supported by ARO. H.X.J. and J.Y.L. gratefully acknowledge the support of the Edward Whitacre and Linda Whitacre Endowment through the AT & T Foundation.",

year = "2008",

doi = "10.1063/1.2955834",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Current-injected 1.54 μm light emitting diodes based on erbium-doped GaN

AU - Dahal, R.

AU - Ugolini, C.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Zavada, J. M.

N1 - Funding Information: This research was partially supported by ARO. H.X.J. and J.Y.L. gratefully acknowledge the support of the Edward Whitacre and Linda Whitacre Endowment through the AT & T Foundation.

PY - 2008

Y1 - 2008

N2 - Current-injected 1.54 μm emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365 nm nitride light emitting diodes. It was found that the 1.54 μm emission intensity increases almost linearly with input forward current. The results represent a step toward demonstrating the feasibility for achieving electrically pumped optical amplifiers for optical communication that possess advantages of both semiconductor optical amplifiers and Er-doped fiber amplifiers.

AB - Current-injected 1.54 μm emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365 nm nitride light emitting diodes. It was found that the 1.54 μm emission intensity increases almost linearly with input forward current. The results represent a step toward demonstrating the feasibility for achieving electrically pumped optical amplifiers for optical communication that possess advantages of both semiconductor optical amplifiers and Er-doped fiber amplifiers.

UR - http://www.scopus.com/inward/record.url?scp=48249144847&partnerID=8YFLogxK

U2 - 10.1063/1.2955834

DO - 10.1063/1.2955834

M3 - Article

AN - SCOPUS:48249144847

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033502

ER -

Current-injected 1.54 μm light emitting diodes based on erbium-doped GaN

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