TY - JOUR
T1 - Cu-related complexes in silicon
AU - Estreicher, S. K.
AU - Hastings, J. L.
N1 - Funding Information:
This works was supported in part by the grant D-1126 from the R.A. Welch Foundation and by the contract XAD-7-17652-01 from the National Renewable Energy Laboratory.
PY - 1999/2/12
Y1 - 1999/2/12
N2 - Hartree-Fock calculations of Cu+ in Si are performed in clusters containing 44-100 Si atoms. The configurations studied include interstitial and substitutional Cu+, copper-acceptor pairs, and copper-hexavacancy complexes. The preliminary results presented below include equilibrium configurations, electronic structures, and binding energies.
AB - Hartree-Fock calculations of Cu+ in Si are performed in clusters containing 44-100 Si atoms. The configurations studied include interstitial and substitutional Cu+, copper-acceptor pairs, and copper-hexavacancy complexes. The preliminary results presented below include equilibrium configurations, electronic structures, and binding energies.
UR - http://www.scopus.com/inward/record.url?scp=0345504135&partnerID=8YFLogxK
U2 - 10.1016/S0921-5107(98)00289-X
DO - 10.1016/S0921-5107(98)00289-X
M3 - Conference article
AN - SCOPUS:0345504135
SN - 0921-5107
VL - 58
SP - 155
EP - 158
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1
ER -