TY - JOUR
T1 - Cryogenic pressure and lifetime studies of a defect related emission in heavily silicon doped GaAs
AU - Holtz, M.
AU - Sauncy, T.
AU - Dallas, T.
AU - Seon, M.
AU - Palsule, C. P.
AU - Gangopadhyay, S.
AU - Massie, S.
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1996/11
Y1 - 1996/11
N2 - We have used cryogenic high pressure measurements and lifetime studies to investigate a defect related emission at 1.269eV in silicon doped GaAs. The pressure measurements prove that the 1.269 eV photon energy is relative to the conduction band. This implies a deep defect level ≈ 0.30 eV above the valence band and an electron capture process from near the conduction band into the defect. The defect level moves up in the bandgap at a rate of (23 ± 3) meV/GPa. Between 20 K and room temperature the defect emission lifetime remains constant at (9.63 ± 0.25) ns, while the intensity decreases over this same range. We explain this surprising result using an intradefect emission process. These results are consistent with a vacancy related defect level, possibly stemming from a gallium vacancy - silicon at gallium (second-nearest-neighbor) defect complex.
AB - We have used cryogenic high pressure measurements and lifetime studies to investigate a defect related emission at 1.269eV in silicon doped GaAs. The pressure measurements prove that the 1.269 eV photon energy is relative to the conduction band. This implies a deep defect level ≈ 0.30 eV above the valence band and an electron capture process from near the conduction band into the defect. The defect level moves up in the bandgap at a rate of (23 ± 3) meV/GPa. Between 20 K and room temperature the defect emission lifetime remains constant at (9.63 ± 0.25) ns, while the intensity decreases over this same range. We explain this surprising result using an intradefect emission process. These results are consistent with a vacancy related defect level, possibly stemming from a gallium vacancy - silicon at gallium (second-nearest-neighbor) defect complex.
UR - http://www.scopus.com/inward/record.url?scp=0030491039&partnerID=8YFLogxK
U2 - 10.1002/pssb.2221980127
DO - 10.1002/pssb.2221980127
M3 - Article
AN - SCOPUS:0030491039
VL - 198
SP - 199
EP - 203
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
SN - 0370-1972
IS - 1
ER -