Abstract
AlGaN-based quantum structures were grown using gas-source molecular beam epitaxy with ammonia. Quantum structures are formed in the wells of Al 0.4Ga0.6N/Al0.55Ga0.45N superlattices, as confirmed by transmission electron microscopy. Optical properties are investigated using cathodoluminescence and time-resolved photoluminescence. We obtain ∼60 fold intensity enhancement over two-dimensional growth. For conditions corresponding to deposition of ∼10 monolayers of well material, we obtain narrow emission at 280 nm and long ∼320 ps photoluminescence decay time.
Original language | English |
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Pages (from-to) | 1556-1558 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics |
Volume | 47 |
Issue number | 3 PART 1 |
DOIs | |
State | Published - Mar 14 2008 |
Keywords
- AlGaN quantum dots
- Gas source molecular beam epitaxy
- Superlattice