Correlations between the growth modes and luminescence properties of AlGaN quantum structures

Sergey A. Nikishin; Boris A. Borisov; Vladimir V. Kuryatkov; Mark Holtz; Gregory A. Garrett; Wendy L. Sarney; Anand V. Sampath; Hongen Shen; Michael Wraback

doi:10.1143/JJAP.47.1556

Correlations between the growth modes and luminescence properties of AlGaN quantum structures

Sergey A. Nikishin, Boris A. Borisov, Vladimir V. Kuryatkov, Mark Holtz, Gregory A. Garrett, Wendy L. Sarney, Anand V. Sampath, Hongen Shen, Michael Wraback

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

AlGaN-based quantum structures were grown using gas-source molecular beam epitaxy with ammonia. Quantum structures are formed in the wells of Al _0.4Ga_0.6N/Al_0.55Ga_0.45N superlattices, as confirmed by transmission electron microscopy. Optical properties are investigated using cathodoluminescence and time-resolved photoluminescence. We obtain ∼60 fold intensity enhancement over two-dimensional growth. For conditions corresponding to deposition of ∼10 monolayers of well material, we obtain narrow emission at 280 nm and long ∼320 ps photoluminescence decay time.

Original language	English
Pages (from-to)	1556-1558
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	47
Issue number	3 PART 1
DOIs	https://doi.org/10.1143/JJAP.47.1556
State	Published - Mar 14 2008

Keywords

AlGaN quantum dots
Gas source molecular beam epitaxy
Superlattice

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10.1143/JJAP.47.1556

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title = "Correlations between the growth modes and luminescence properties of AlGaN quantum structures",

abstract = "AlGaN-based quantum structures were grown using gas-source molecular beam epitaxy with ammonia. Quantum structures are formed in the wells of Al 0.4Ga0.6N/Al0.55Ga0.45N superlattices, as confirmed by transmission electron microscopy. Optical properties are investigated using cathodoluminescence and time-resolved photoluminescence. We obtain ∼60 fold intensity enhancement over two-dimensional growth. For conditions corresponding to deposition of ∼10 monolayers of well material, we obtain narrow emission at 280 nm and long ∼320 ps photoluminescence decay time.",

keywords = "AlGaN quantum dots, Gas source molecular beam epitaxy, Superlattice",

author = "Nikishin, {Sergey A.} and Borisov, {Boris A.} and Kuryatkov, {Vladimir V.} and Mark Holtz and Garrett, {Gregory A.} and Sarney, {Wendy L.} and Sampath, {Anand V.} and Hongen Shen and Michael Wraback",

year = "2008",

month = mar,

day = "14",

doi = "10.1143/JJAP.47.1556",

language = "English",

volume = "47",

pages = "1556--1558",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "3 PART 1",

}

Correlations between the growth modes and luminescence properties of AlGaN quantum structures. / Nikishin, Sergey A.; Borisov, Boris A.; Kuryatkov, Vladimir V.; Holtz, Mark; Garrett, Gregory A.; Sarney, Wendy L.; Sampath, Anand V.; Shen, Hongen; Wraback, Michael.

In: Japanese Journal of Applied Physics, Vol. 47, No. 3 PART 1, 14.03.2008, p. 1556-1558.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Correlations between the growth modes and luminescence properties of AlGaN quantum structures

AU - Nikishin, Sergey A.

AU - Borisov, Boris A.

AU - Kuryatkov, Vladimir V.

AU - Holtz, Mark

AU - Garrett, Gregory A.

AU - Sarney, Wendy L.

AU - Sampath, Anand V.

AU - Shen, Hongen

AU - Wraback, Michael

PY - 2008/3/14

Y1 - 2008/3/14

N2 - AlGaN-based quantum structures were grown using gas-source molecular beam epitaxy with ammonia. Quantum structures are formed in the wells of Al 0.4Ga0.6N/Al0.55Ga0.45N superlattices, as confirmed by transmission electron microscopy. Optical properties are investigated using cathodoluminescence and time-resolved photoluminescence. We obtain ∼60 fold intensity enhancement over two-dimensional growth. For conditions corresponding to deposition of ∼10 monolayers of well material, we obtain narrow emission at 280 nm and long ∼320 ps photoluminescence decay time.

AB - AlGaN-based quantum structures were grown using gas-source molecular beam epitaxy with ammonia. Quantum structures are formed in the wells of Al 0.4Ga0.6N/Al0.55Ga0.45N superlattices, as confirmed by transmission electron microscopy. Optical properties are investigated using cathodoluminescence and time-resolved photoluminescence. We obtain ∼60 fold intensity enhancement over two-dimensional growth. For conditions corresponding to deposition of ∼10 monolayers of well material, we obtain narrow emission at 280 nm and long ∼320 ps photoluminescence decay time.

KW - AlGaN quantum dots

KW - Gas source molecular beam epitaxy

KW - Superlattice

UR - http://www.scopus.com/inward/record.url?scp=54249112496&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.1556

DO - 10.1143/JJAP.47.1556

M3 - Article

AN - SCOPUS:54249112496

VL - 47

SP - 1556

EP - 1558

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 3 PART 1

ER -

Correlations between the growth modes and luminescence properties of AlGaN quantum structures

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Keywords

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