AlGaN-based quantum structures were grown using gas-source molecular beam epitaxy with ammonia. Quantum structures are formed in the wells of Al 0.4Ga0.6N/Al0.55Ga0.45N superlattices, as confirmed by transmission electron microscopy. Optical properties are investigated using cathodoluminescence and time-resolved photoluminescence. We obtain ∼60 fold intensity enhancement over two-dimensional growth. For conditions corresponding to deposition of ∼10 monolayers of well material, we obtain narrow emission at 280 nm and long ∼320 ps photoluminescence decay time.
- AlGaN quantum dots
- Gas source molecular beam epitaxy