Correlations between the growth modes and luminescence properties of AlGaN quantum structures

Sergey A. Nikishin, Boris A. Borisov, Vladimir V. Kuryatkov, Mark Holtz, Gregory A. Garrett, Wendy L. Sarney, Anand V. Sampath, Hongen Shen, Michael Wraback

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

AlGaN-based quantum structures were grown using gas-source molecular beam epitaxy with ammonia. Quantum structures are formed in the wells of Al 0.4Ga0.6N/Al0.55Ga0.45N superlattices, as confirmed by transmission electron microscopy. Optical properties are investigated using cathodoluminescence and time-resolved photoluminescence. We obtain ∼60 fold intensity enhancement over two-dimensional growth. For conditions corresponding to deposition of ∼10 monolayers of well material, we obtain narrow emission at 280 nm and long ∼320 ps photoluminescence decay time.

Original languageEnglish
Pages (from-to)1556-1558
Number of pages3
JournalJapanese Journal of Applied Physics
Volume47
Issue number3 PART 1
DOIs
StatePublished - Mar 14 2008

Keywords

  • AlGaN quantum dots
  • Gas source molecular beam epitaxy
  • Superlattice

Fingerprint Dive into the research topics of 'Correlations between the growth modes and luminescence properties of AlGaN quantum structures'. Together they form a unique fingerprint.

  • Cite this

    Nikishin, S. A., Borisov, B. A., Kuryatkov, V. V., Holtz, M., Garrett, G. A., Sarney, W. L., Sampath, A. V., Shen, H., & Wraback, M. (2008). Correlations between the growth modes and luminescence properties of AlGaN quantum structures. Japanese Journal of Applied Physics, 47(3 PART 1), 1556-1558. https://doi.org/10.1143/JJAP.47.1556