Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides

I. Wen Feng; Weiping Zhao; Jing Li; Jingyu Lin; Hongxing Jiang; John Zavada

doi:10.1364/AO.52.005426

Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides

I. Wen Feng, Weiping Zhao, Jing Li, Jingyu Lin, Hongxing Jiang, John Zavada

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition. GaN:Er waveguides were fabricated based on four different GaN:Er layer structures: GaN:Er/GaN/Al₂O₃, GaN:Er/GaN/AlN/Al₂O₃, GaN:Er/GaN/Al_0.75Ga _0.25N/AlN/Al₂O₃, and GaN/GaN:Er/GaN/Al ₂O₃. Optical loss at 1.54 μm in these waveguide structures has been measured. It was found that the optical attenuation coefficient of the GaN:Er waveguide increases almost linearly with the GaN (002) x-ray rocking curve linewidth. The lowest measured loss was ∼6 dB/cm.

Original language	English
Pages (from-to)	5426-5429
Number of pages	4
Journal	Applied Optics
Volume	52
Issue number	22
DOIs	https://doi.org/10.1364/AO.52.005426
State	Published - Aug 1 2013

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title = "Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides",

abstract = "Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition. GaN:Er waveguides were fabricated based on four different GaN:Er layer structures: GaN:Er/GaN/Al2O3, GaN:Er/GaN/AlN/Al2O3, GaN:Er/GaN/Al0.75Ga 0.25N/AlN/Al2O3, and GaN/GaN:Er/GaN/Al 2O3. Optical loss at 1.54 μm in these waveguide structures has been measured. It was found that the optical attenuation coefficient of the GaN:Er waveguide increases almost linearly with the GaN (002) x-ray rocking curve linewidth. The lowest measured loss was ∼6 dB/cm.",

author = "Feng, {I. Wen} and Weiping Zhao and Jing Li and Jingyu Lin and Hongxing Jiang and John Zavada",

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T1 - Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides

AU - Feng, I. Wen

AU - Zhao, Weiping

AU - Li, Jing

AU - Lin, Jingyu

AU - Jiang, Hongxing

AU - Zavada, John

PY - 2013/8/1

Y1 - 2013/8/1

N2 - Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition. GaN:Er waveguides were fabricated based on four different GaN:Er layer structures: GaN:Er/GaN/Al2O3, GaN:Er/GaN/AlN/Al2O3, GaN:Er/GaN/Al0.75Ga 0.25N/AlN/Al2O3, and GaN/GaN:Er/GaN/Al 2O3. Optical loss at 1.54 μm in these waveguide structures has been measured. It was found that the optical attenuation coefficient of the GaN:Er waveguide increases almost linearly with the GaN (002) x-ray rocking curve linewidth. The lowest measured loss was ∼6 dB/cm.

AB - Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition. GaN:Er waveguides were fabricated based on four different GaN:Er layer structures: GaN:Er/GaN/Al2O3, GaN:Er/GaN/AlN/Al2O3, GaN:Er/GaN/Al0.75Ga 0.25N/AlN/Al2O3, and GaN/GaN:Er/GaN/Al 2O3. Optical loss at 1.54 μm in these waveguide structures has been measured. It was found that the optical attenuation coefficient of the GaN:Er waveguide increases almost linearly with the GaN (002) x-ray rocking curve linewidth. The lowest measured loss was ∼6 dB/cm.

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