Abstract
Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition. GaN:Er waveguides were fabricated based on four different GaN:Er layer structures: GaN:Er/GaN/Al2O3, GaN:Er/GaN/AlN/Al2O3, GaN:Er/GaN/Al0.75Ga 0.25N/AlN/Al2O3, and GaN/GaN:Er/GaN/Al 2O3. Optical loss at 1.54 μm in these waveguide structures has been measured. It was found that the optical attenuation coefficient of the GaN:Er waveguide increases almost linearly with the GaN (002) x-ray rocking curve linewidth. The lowest measured loss was ∼6 dB/cm.
Original language | English |
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Pages (from-to) | 5426-5429 |
Number of pages | 4 |
Journal | Applied Optics |
Volume | 52 |
Issue number | 22 |
DOIs | |
State | Published - Aug 1 2013 |