Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides

I. Wen Feng, Weiping Zhao, Jing Li, Jingyu Lin, Hongxing Jiang, John Zavada

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition. GaN:Er waveguides were fabricated based on four different GaN:Er layer structures: GaN:Er/GaN/Al2O3, GaN:Er/GaN/AlN/Al2O3, GaN:Er/GaN/Al0.75Ga 0.25N/AlN/Al2O3, and GaN/GaN:Er/GaN/Al 2O3. Optical loss at 1.54 μm in these waveguide structures has been measured. It was found that the optical attenuation coefficient of the GaN:Er waveguide increases almost linearly with the GaN (002) x-ray rocking curve linewidth. The lowest measured loss was ∼6 dB/cm.

Original languageEnglish
Pages (from-to)5426-5429
Number of pages4
JournalApplied Optics
Volume52
Issue number22
DOIs
StatePublished - Aug 1 2013

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