Correlation between optoelectronic and structural properties and epilayer thickness of AlN

B. N. Pantha; R. Dahal; M. L. Nakarmi; N. Nepal; J. Li; Jingyu Lin; Hongxing Jiang; Q. S. Paduano; D. Weyburne

Correlation between optoelectronic and structural properties and epilayer thickness of AlN

B. N. Pantha, R. Dahal, M. L. Nakarmi, N. Nepal, J. Li, Jingyu Lin, Hongxing Jiang, Q. S. Paduano, D. Weyburne

Electrical and Computer Engineering

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	241101
Journal	Appl. Phys. Lett.
State	Published - Jun 11 2007

Cite this

Pantha, B. N., Dahal, R., Nakarmi, M. L., Nepal, N., Li, J., Lin, J., Jiang, H., Paduano, Q. S., & Weyburne, D. (2007). Correlation between optoelectronic and structural properties and epilayer thickness of AlN. Appl. Phys. Lett., 241101.

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author = "Pantha, {B. N.} and R. Dahal and Nakarmi, {M. L.} and N. Nepal and J. Li and Jingyu Lin and Hongxing Jiang and Paduano, {Q. S.} and D. Weyburne",

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AU - Pantha, B. N.

AU - Dahal, R.

AU - Nakarmi, M. L.

AU - Nepal, N.

AU - Li, J.

AU - Lin, Jingyu

AU - Jiang, Hongxing

AU - Paduano, Q. S.

AU - Weyburne, D.

PY - 2007/6/11

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M3 - Article

SP - 241101

JO - Appl. Phys. Lett.

JF - Appl. Phys. Lett.

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