Correlation between optoelectronic and structural properties and epilayer thickness of AlN

B. N. Pantha, R. Dahal, M. L. Nakarmi, N. Nepal, J. Li, Jingyu Lin, Hongxing Jiang, Q. S. Paduano, D. Weyburne

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)241101
JournalAppl. Phys. Lett.
StatePublished - Jun 11 2007

Cite this

Pantha, B. N., Dahal, R., Nakarmi, M. L., Nepal, N., Li, J., Lin, J., Jiang, H., Paduano, Q. S., & Weyburne, D. (2007). Correlation between optoelectronic and structural properties and epilayer thickness of AlN. Appl. Phys. Lett., 241101.