Copper-related defects in silicon

Stefan K. Estreicher

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Copper-related defects in Si are studied at the ab initio Hartree-Fock level in clusters containing up to 100 Si atoms. The defects studied are interstitial and substitutional copper, as well as one through five Cu's trapped at an internal void modeled by the ring-hexavacancy. Configurations, electronic structures, and binding energies are calculated. The origin of the electrical activity of copper precipitates and trends are discussed.

Original languageEnglish
Pages (from-to)424-428
Number of pages5
JournalPhysica B: Condensed Matter
StatePublished - Dec 15 1999
EventProceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA
Duration: Jul 26 1999Jul 30 1999


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