Copper-related defects in silicon

Stefan K. Estreicher

doi:10.1016/S0921-4526(99)00496-2

Copper-related defects in silicon

Stefan K. Estreicher

Physics

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

Copper-related defects in Si are studied at the ab initio Hartree-Fock level in clusters containing up to 100 Si atoms. The defects studied are interstitial and substitutional copper, as well as one through five Cu's trapped at an internal void modeled by the ring-hexavacancy. Configurations, electronic structures, and binding energies are calculated. The origin of the electrical activity of copper precipitates and trends are discussed.

Original language	English
Pages (from-to)	424-428
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00496-2
State	Published - Dec 15 1999
Event	Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: Jul 26 1999 → Jul 30 1999

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10.1016/S0921-4526(99)00496-2

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title = "Copper-related defects in silicon",

abstract = "Copper-related defects in Si are studied at the ab initio Hartree-Fock level in clusters containing up to 100 Si atoms. The defects studied are interstitial and substitutional copper, as well as one through five Cu's trapped at an internal void modeled by the ring-hexavacancy. Configurations, electronic structures, and binding energies are calculated. The origin of the electrical activity of copper precipitates and trends are discussed.",

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AU - Estreicher, Stefan K.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - Copper-related defects in Si are studied at the ab initio Hartree-Fock level in clusters containing up to 100 Si atoms. The defects studied are interstitial and substitutional copper, as well as one through five Cu's trapped at an internal void modeled by the ring-hexavacancy. Configurations, electronic structures, and binding energies are calculated. The origin of the electrical activity of copper precipitates and trends are discussed.

AB - Copper-related defects in Si are studied at the ab initio Hartree-Fock level in clusters containing up to 100 Si atoms. The defects studied are interstitial and substitutional copper, as well as one through five Cu's trapped at an internal void modeled by the ring-hexavacancy. Configurations, electronic structures, and binding energies are calculated. The origin of the electrical activity of copper precipitates and trends are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0033345582&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00496-2

DO - 10.1016/S0921-4526(99)00496-2

M3 - Conference article

AN - SCOPUS:0033345582

SN - 0921-4526

VL - 273-274

SP - 424

EP - 428

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)

Y2 - 26 July 1999 through 30 July 1999

ER -

Copper-related defects in silicon

Abstract

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