Controlling crystal orientation in microporous titanosilicate ETS-4 films by secondary growth method

B. Yilmaz, K. G. Shattuck, J. Warzywoda, A. Sacco

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The secondary growth mechanism of b-out-of-plane oriented ETS-4 films was investigated and conditions were established to effectively decouple nucleation from crystal growth. Supported ETS-4 films were prepared by a two-step hydrothermal synthesis procedure, which included direct crystallization of seed layers on supports followed by secondary growth of seed layers. Porous α-alumina and titania substrates were employed as supports. Rectangular substrates were diagonally placed in 10 mL Teflon-lined stainless steel autoclaves. Both faces of these rectangular substrates had identical surface characteristics. Syntheses were carried out at 448 K for 72 hr. Seed layer syntheses were performed under autoclave rotation (72 rpm), and static hydrothermal conditions were used for secondary growth of these seed layers. FE-SEM, X-ray powder diffraction, and energy dispersive X-ray spectroscopy were used for characterization.

Original languageEnglish
Pages (from-to)3135-3138
Number of pages4
JournalJournal of Materials Science
Volume41
Issue number10
DOIs
StatePublished - May 2006

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