In this paper, continuum models for electrical breakdown are described. These models are based on calculations of the carrier distribution function as a function of electric field and carrier density. In these continuum models, the impact ionization rate is approximated in the extremes of low and high carrier density. These continuum models are used for calculations of electrical breakdown in GaAs. In particular, these models are applied to the operation of photoconductive semiconductor switch (PCSS) devices. This comparison with data suggests that a new physics mechanism is required to explain the PCSS data, a new mechanism is hypothesized.
|State||Published - Nov 15 2007|