Continuous to bound interband transitions in δ-doped GaAs layers

A. A. Bernussi, J. A. Brum, P. Motisuke, P. Basmaji, M. S. Li, O. Hipólito

Research output: Contribution to journalArticlepeer-review

Abstract

We have studied the interband transitions of several silicon δ-doped GaAs samples using the technique of photoreflectance spectroscopy. The features observed in the optical spectra above the GaAs fundamental energy gap are tentatively attributed to transitions involving continuous valence band states and quantum-confined states at the conduction-band. The observed interband transition energies are in qualitative agreement with the self-consistently calculated ones taking into account the spreading of dopants.

Original languageEnglish
Pages (from-to)205-208
Number of pages4
JournalSuperlattices and Microstructures
Volume8
Issue number2
DOIs
StatePublished - 1990

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