@inproceedings{e35e5b2c50c74cad85daa0401e97599b,
title = "Continuous switching of ultra-high voltage silicon carbide MOSFETs",
abstract = "Silicon carbide power semiconductor devices are capable of increasing the power density of power electronics systems [1, 2]. In recent years, devices rated to block voltages up to 20 kV have been demonstrated [3]. These research grade devices must be fully characterized to determine operating characteristics as well as failure mechanisms. The purpose of this paper is to demonstrate the continuous switching performance of ultra-high voltage metal oxide semiconductor field effect transistors (MOSFET) rated for 15 kV / 10 A. A high voltage boost converter was developed to evaluate the continuous switching performance where the high-voltage MOSFET is utilized as the main switching element. During operation, the on-state voltage, gate leakage current, and dc characteristics are monitored to determine device degradation. Measured device degradation is presented as a comparison of initial and final dc characterization.",
keywords = "15 kV, Boost converter, Degradation, MOSFET, SiC, Silicon carbide, Switching",
author = "Bilbao, {Argenis V.} and Schrock, {James A.} and Kelley, {Mitchell D.} and Emilly Hirsch and Ray, {William B.} and Bayne, {Stephen B.} and Giesselmann, {Michael G.}",
note = "Funding Information: ACKNOWLEDGMENT This research was sponsored by the Army Research Laboratory under a subcontract from Wolfspeed – a Cree Company and was accomplished under Cooperative Agreement Number W911NF-10-2-0038. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the Army Research Laboratory, the U.S. Government or Cree, Inc. The U.S. Government is authorized to reproduce and distribute reprints for Government purposes notwithstanding any copyright notation hereon. Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016 ; Conference date: 05-07-2016 Through 09-07-2016",
year = "2017",
month = aug,
day = "17",
doi = "10.1109/IPMHVC.2016.8012882",
language = "English",
series = "2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "463--466",
booktitle = "2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016",
}