Continuous switching of ultra-high voltage silicon carbide MOSFETs

Argenis V. Bilbao, James A. Schrock, Mitchell D. Kelley, Emilly Hirsch, William B. Ray, Stephen B. Bayne, Michael G. Giesselmann

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Silicon carbide power semiconductor devices are capable of increasing the power density of power electronics systems [1, 2]. In recent years, devices rated to block voltages up to 20 kV have been demonstrated [3]. These research grade devices must be fully characterized to determine operating characteristics as well as failure mechanisms. The purpose of this paper is to demonstrate the continuous switching performance of ultra-high voltage metal oxide semiconductor field effect transistors (MOSFET) rated for 15 kV / 10 A. A high voltage boost converter was developed to evaluate the continuous switching performance where the high-voltage MOSFET is utilized as the main switching element. During operation, the on-state voltage, gate leakage current, and dc characteristics are monitored to determine device degradation. Measured device degradation is presented as a comparison of initial and final dc characterization.

Original languageEnglish
Title of host publication2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages463-466
Number of pages4
ISBN (Electronic)9781509023547
DOIs
StatePublished - Aug 17 2017
Event2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016 - San Francisco, United States
Duration: Jul 5 2016Jul 9 2016

Publication series

Name2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016

Conference

Conference2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016
CountryUnited States
CitySan Francisco
Period07/5/1607/9/16

Keywords

  • 15 kV
  • Boost converter
  • Degradation
  • MOSFET
  • SiC
  • Silicon carbide
  • Switching

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  • Cite this

    Bilbao, A. V., Schrock, J. A., Kelley, M. D., Hirsch, E., Ray, W. B., Bayne, S. B., & Giesselmann, M. G. (2017). Continuous switching of ultra-high voltage silicon carbide MOSFETs. In 2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016 (pp. 463-466). [8012882] (2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPMHVC.2016.8012882