Abstract
We focus on a simulation study to probe the mitigation of electric fields, especially at the edges of metal contacts to SiC-based photoconductive switches. Field reduction becomes germane given that field-induced failures near contacts have been reported. A dual strategy of extending metal contacts to effectively spread the electric field over a larger distance and to employ HfO2 as a high-k dielectric, is discussed. Simulation results show that peak electric fields can be lowered by up to ∼67% relative to a standard design. Finally, our calculations predict that the internal temperature rise for a ∼ 7 -ns laser pulse and applied voltages around 20 kV (typical experimental values) would also be effectively controlled.
Original language | English |
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Article number | 7505601 |
Pages (from-to) | 3171-3176 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 63 |
Issue number | 8 |
DOIs | |
State | Published - 2016 |
Keywords
- Field mitigation
- SiC material
- high-k dielectrics
- model analysis
- photoconductive switch