Computer model simulation of SiC diode reverse-bias instabilities due to deep energy impurity levels

R. P. Joshi, C. Fazi

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We performed numerical simulations of the transient response of reverse-biased silicon carbide (SiC) diodes to fast voltage pulses, based on a drift-diffusion transport model. Our results reveal that SiC material containing "deep defects" can lead to high device currents and internal heating. This could potentially be detrimental to device stability and lead to premature device breakdown. The minority electrons within P-regions containing deep levels are shown to play an important role. These results suggest that defect control and suppression of deep states will be crucial for the successful development of stable SiC devices for high-power applications.

Original languageEnglish
Pages (from-to)1033-1036
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 2
DOIs
StatePublished - 1998

Keywords

  • High-Field Instabilities
  • SiC Diodes

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