Compositional changes in Erbium-implanted GaN films due to annealing

J. M. Zavada, R. G. Wilson, U. Hömmerich, M. Thaik, J. T. Seo, C. J. Ellis, J. Y. Lin, H. X. Jiang

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1 Scopus citations


We have conducted a study of the material and infrared-luminescence properties of Er-implanted GaN thin films as a function of annealing. The GaN films, grown by metal-organic chemical-vapor deposition, were coimplanted with Er and O ions. After implantation, the films were furnace annealed at temperatures up to 1,100°C. Following each annealing stage, the samples were examined by photoluminescence (PL) measurements and secondary ion-mass spectrometry (SIMS) analysis. In the as-implanted samples, no PL signal near 1,540 nm could be detected with either above-bandgap or below-bandgap excitation. Only after annealing at temperatures above 900°C was the 1,540-nm luminescence detectable. Annealing at higher temperatures resulted first in an increase and then a decrease in the PL-signal intensities. The SIMS data showed that large concentrations of Al, O, and C atoms entered into the GaN films with high-temperature annealing. The stoichiometric changes in the GaN appear responsible for the changes in the Er-related luminescence.

Original languageEnglish
Pages (from-to)382-387
Number of pages6
JournalJournal of Electronic Materials
Issue number5
StatePublished - May 2003


  • Annealing
  • Erbium
  • GaN
  • Implantation
  • Photoluminescence
  • SIMS


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