Comparison of Si, GaAs, SiC and GaN FET-type switches for pulsed power applications

Xianyue Gu, Qiong Shui, Charles W. Myles, Martin A. Gundersen

Research output: Contribution to conferencePaper

7 Scopus citations

Abstract

Among the present limitations on the peak voltage of traditional Si-MOSFET switches are fundamental materials properties that are related both to intrinsic properties (such as bandgap), and to defects. Switches fabricated from semiconductors such as GaAs, SiC and GaN hold promise if hold-off voltages of several kilovolts and fast rise rates are needed. High power and short pulse (< 1 μs) applications require both fast switching speed and great current handling capability. The question arises whether any single material has all of these desired properties or whether there are intrinsic limitations. In order to investigate this, we have performed simulations of the electrical properties of FET-type switches fabricated from each of these materials. Both perfect material properties and the effects of defects have been included. The simulation results show that deep level defects degrade the device performance. Based on our simulations and on the available data, in the near term, 4H-SiC is the most attractive of the four materials for pulsed power applications.

Original languageEnglish
Pages362-365
Number of pages4
StatePublished - Dec 1 2003
Event14th IEEE International Pulsed Power Conference - Dallas, TX, United States
Duration: Jun 15 2003Jun 18 2003

Conference

Conference14th IEEE International Pulsed Power Conference
CountryUnited States
CityDallas, TX
Period06/15/0306/18/03

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Gu, X., Shui, Q., Myles, C. W., & Gundersen, M. A. (2003). Comparison of Si, GaAs, SiC and GaN FET-type switches for pulsed power applications. 362-365. Paper presented at 14th IEEE International Pulsed Power Conference, Dallas, TX, United States.