Comparison of optical transitions in InGaN quantum well structures and microdisks

Lun Dai; Bei Zhang; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1355280

Comparison of optical transitions in InGaN quantum well structures and microdisks

Lun Dai, Bei Zhang, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

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57 Scopus citations

Abstract

In_0.22Ga_0.78N/In_0.06Ga_0.94N multiple quantum well (MQW) microdisks 6.0 μm in diameter have been fabricated by photolithography and ion beam etching. Photoluminescence (PL) spectroscopy has been employed to study the optical transitions in these microdisks as well as in the original MQW structures prior to microdisk formation. With respect to the original MQWs, a blueshift in the PL peak position, enhancement of the PL intensity, and narrowing of the PL linewidth were observed at 10 K in the microdisks. These observations can be understood mainly in terms of a reduction of piezoelectric field strength due to partial strain relief in the microdisks. The magnitude the piezoelectric field reduction was estimated to be around 0.27 MV/cm, which is of the same order as the previously reported value of the piezoelectric field in similar MQW structures.

Original language	English
Pages (from-to)	4951-4954
Number of pages	4
Journal	Journal of Applied Physics
Volume	89
Issue number	9
DOIs	https://doi.org/10.1063/1.1355280
State	Published - May 1 2001

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title = "Comparison of optical transitions in InGaN quantum well structures and microdisks",

abstract = "In0.22Ga0.78N/In0.06Ga0.94N multiple quantum well (MQW) microdisks 6.0 μm in diameter have been fabricated by photolithography and ion beam etching. Photoluminescence (PL) spectroscopy has been employed to study the optical transitions in these microdisks as well as in the original MQW structures prior to microdisk formation. With respect to the original MQWs, a blueshift in the PL peak position, enhancement of the PL intensity, and narrowing of the PL linewidth were observed at 10 K in the microdisks. These observations can be understood mainly in terms of a reduction of piezoelectric field strength due to partial strain relief in the microdisks. The magnitude the piezoelectric field reduction was estimated to be around 0.27 MV/cm, which is of the same order as the previously reported value of the piezoelectric field in similar MQW structures.",

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AU - Dai, Lun

AU - Zhang, Bei

AU - Lin, J. Y.

AU - Jiang, H. X.

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AB - In0.22Ga0.78N/In0.06Ga0.94N multiple quantum well (MQW) microdisks 6.0 μm in diameter have been fabricated by photolithography and ion beam etching. Photoluminescence (PL) spectroscopy has been employed to study the optical transitions in these microdisks as well as in the original MQW structures prior to microdisk formation. With respect to the original MQWs, a blueshift in the PL peak position, enhancement of the PL intensity, and narrowing of the PL linewidth were observed at 10 K in the microdisks. These observations can be understood mainly in terms of a reduction of piezoelectric field strength due to partial strain relief in the microdisks. The magnitude the piezoelectric field reduction was estimated to be around 0.27 MV/cm, which is of the same order as the previously reported value of the piezoelectric field in similar MQW structures.

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Comparison of optical transitions in InGaN quantum well structures and microdisks

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