Comparative analysis of temperature-dependent Raman spectra of GaN and GaN/Mg films

Rui Min Wang, Guang De Chen, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticle

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Abstract

The Raman spectra of unintentionally doped gallium nitride (GaN) and Mg-doped GaN films were investigated and compared at room temperature and low temperature. The differences of E2 and A1(LO) mode in two samples are discussed. Stress relaxation is observed in Mg-doped GaN, and it is suggested that Mg-induced misfit dislocation and electron-phonon interaction are the possible origins. A peak at 247 cm-1 is observed in both the Raman spectra of GaN and Mg-doped GaN. Temperature-dependent Raman scattering experiment of Mg-doped GaN shows the frequency and intensity changes of this peak with temperature. This peak is attributed to the defect-induced vibrational mode.

Original languageEnglish
Pages (from-to)112-116
Number of pages5
JournalFrontiers of Physics in China
Volume1
Issue number1
DOIs
StatePublished - Jan 2006

Keywords

  • Defect modes
  • GaN
  • P-type GaN
  • Raman scattering

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