Compact silicon carbide switch for high voltage operation

C. James, C. Hettler, J. Dickens, A. Neuber

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Vanadium compensated, 6H silicon carbide (SiC) is investigated as a compact, high-power, linear-mode photoconductive semiconductor switch (PCSS) material. SiC is an attractive material due to its high resistivity, high electrical breakdown strength, and long recombination times compared to other photoconductive materials. The PCSS is designed for fast-rise time, low-jitter (sub-nanosecond) operation in a matched 50 ω, test bed. Ohmic contacts were applied by physical vapor deposition and initial tests utilized an external Nd:YAG laser trigger source. Analysis of the optical properties of Va-compensated SiC and of switch conduction resistance are presented and performance of contact material is discussed.

Original languageEnglish
Title of host publicationProceedings of the 2008 IEEE International Power Modulators and High Voltage Conference, PMHVC
Pages17-20
Number of pages4
DOIs
StatePublished - 2008
Event2008 IEEE International Power Modulators and High Voltage Conference, PMHVC - Las Vegas, NV, United States
Duration: May 27 2008May 31 2008

Publication series

NameProceedings of the 2008 IEEE International Power Modulators and High Voltage Conference, PMHVC

Conference

Conference2008 IEEE International Power Modulators and High Voltage Conference, PMHVC
CountryUnited States
CityLas Vegas, NV
Period05/27/0805/31/08

Keywords

  • PCSS
  • Photoconductive switching
  • SiC
  • Silicon carbide

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  • Cite this

    James, C., Hettler, C., Dickens, J., & Neuber, A. (2008). Compact silicon carbide switch for high voltage operation. In Proceedings of the 2008 IEEE International Power Modulators and High Voltage Conference, PMHVC (pp. 17-20). [4743565] (Proceedings of the 2008 IEEE International Power Modulators and High Voltage Conference, PMHVC). https://doi.org/10.1109/IPMC.2008.4743565