The spectral properties of thin film coated and solid form semiconductor neutron detectors were studied. It was found that the peaks corresponding to single capture products in the simulations have tails at lower energies for conversion layer devices. At higher energies for true (non-Schottky) homojunctions and heterojunction diodes, peaks were found to correspond to single capture events even for film thickness below 1 μm. This phenomena suggested that in a heterojunction diode formed by semiconducting boron carbide and Si, electrical signals could be collected from along the reaction product paths within both boron carbide and silicon.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|State||Published - Jan 1 2005|
- Electron spectroscopy
- Neutron detection
- Semiconductor detector