Collective effects of interface roughness and alloy disorder in InxGa1-xN/GaN multiple quantum wells

K. C. Zeng, M. Smith, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticle

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Abstract

The collective effects of alloy disorder and interface roughness on optical properties of InxGa1-xN/GaN multiple quantum wells (MQWs) have been studied. The results are compared with those of GaN/AlGaN MQWs and InGaN epilayers. InxGa1-xN/GaN MQWs emit a broad and asymmetrical photoluminescence (PL) band, while GaN/AlGaN MQWs and InGaN epilayers emit narrower and Gaussian-shaped PL bands. Furthermore, the decay of excitons at low temperatures in InxGa1-xN/GaN MQWs follows a nonexponential function even at the lower-energy side of the PL spectral peak, while those in GaN/AlGaN MQWs and in InGaN epilayers follow a single exponential function. Both alloy disorder and interface roughness have to be included in order to interpret the PL emission spectrum and the decay dynamics in InxGa1-xN/GaN MQWs. Important parameters of the InxGa1-xN/GaN MQWs, σxL, and dτ/dL, denoting the alloy disorder, the interface roughness, and the rate of changing of the exciton decay lifetime with well width, respectively, have been deduced. The method developed here can be used to determine σxL, and dτ/dL in any MQW systems with wells being alloy materials.

Original languageEnglish
Pages (from-to)1724-1726
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number12
DOIs
StatePublished - 1998

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