Chemical trends for deep levels associated with vacancy-impurity complexes in semiconductors

Yu Tang Shen, Charles W. Myles

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

A theory of the deep levels produced by triplet vacancy-impurity complexes in covalent semiconductors is presented. The major chemical trends in the deep levels of a1 and b1 symmetry are predicted for such complexes in 10 materials. These calculations show that a triplet vacancy-impurity complex can produce deep levels at energies where neither the corresponding vacancy-impurity pair nor the isolated impurity produce any.

Original languageEnglish
Pages (from-to)6222-6235
Number of pages14
JournalPhysical Review B
Volume40
Issue number9
DOIs
StatePublished - 1989

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