Charge transient spectroscopy

J. W. Farmer; C. D. Lamp; J. M. Meese

doi:10.1063/1.93401

Charge transient spectroscopy

J. W. Farmer, C. D. Lamp, J. M. Meese

Physics

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82 Scopus citations

Abstract

A new variation of the deep level transient spectroscopy technique is presented. In the new approach, the current transient is integrated, yielding a charge transient. A simple circuit for integrating the current is given and is analyzed. The charge transient technique is compared to previous capacitance transient and current transient techniques, and the advantages of the new method are discussed. The effects of diode leakage currents are also analyzed. Data are presented for defects in neutron irradiated Si.

Original language	English
Pages (from-to)	1063-1065
Number of pages	3
Journal	Applied Physics Letters
Volume	41
Issue number	11
DOIs	https://doi.org/10.1063/1.93401
State	Published - 1982

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title = "Charge transient spectroscopy",

abstract = "A new variation of the deep level transient spectroscopy technique is presented. In the new approach, the current transient is integrated, yielding a charge transient. A simple circuit for integrating the current is given and is analyzed. The charge transient technique is compared to previous capacitance transient and current transient techniques, and the advantages of the new method are discussed. The effects of diode leakage currents are also analyzed. Data are presented for defects in neutron irradiated Si.",

author = "Farmer, {J. W.} and Lamp, {C. D.} and Meese, {J. M.}",

year = "1982",

doi = "10.1063/1.93401",

language = "English",

volume = "41",

pages = "1063--1065",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "11",

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T1 - Charge transient spectroscopy

AU - Farmer, J. W.

AU - Lamp, C. D.

AU - Meese, J. M.

PY - 1982

Y1 - 1982

N2 - A new variation of the deep level transient spectroscopy technique is presented. In the new approach, the current transient is integrated, yielding a charge transient. A simple circuit for integrating the current is given and is analyzed. The charge transient technique is compared to previous capacitance transient and current transient techniques, and the advantages of the new method are discussed. The effects of diode leakage currents are also analyzed. Data are presented for defects in neutron irradiated Si.

AB - A new variation of the deep level transient spectroscopy technique is presented. In the new approach, the current transient is integrated, yielding a charge transient. A simple circuit for integrating the current is given and is analyzed. The charge transient technique is compared to previous capacitance transient and current transient techniques, and the advantages of the new method are discussed. The effects of diode leakage currents are also analyzed. Data are presented for defects in neutron irradiated Si.

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U2 - 10.1063/1.93401

DO - 10.1063/1.93401

M3 - Article

AN - SCOPUS:36749120329

SN - 0003-6951

VL - 41

SP - 1063

EP - 1065

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Charge transient spectroscopy

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