A new variation of the deep level transient spectroscopy technique is presented. In the new approach, the current transient is integrated, yielding a charge transient. A simple circuit for integrating the current is given and is analyzed. The charge transient technique is compared to previous capacitance transient and current transient techniques, and the advantages of the new method are discussed. The effects of diode leakage currents are also analyzed. Data are presented for defects in neutron irradiated Si.