Charge state splittings of deep levels in Hg1_xCdxTe

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Abstract

The charge state splittings of the deep levels produced by singly ionized, substitutional impurities on both the cation (Hg/Cd) and the anion (Te) sites in Hgi.CdTe are investigated using a Green's function formalism. With this approach, the defect potential, the deep level, and the charge density on the impurity and its nearest-neighbor sites are determined self-consistently in a tight-binding basis. Results are presented for the charge state splittings of the sx/2-like levels associated with positively charged impurities on the cation site and of the p1/2-like levels associated with negatively charged impurities on the anion site. In all cases investigated, the splittings are found to be of the order of 0.1 to 0.2 eV and to decrease with decreasing alloy composition (;c).

Original languageEnglish
Pages (from-to)2675-2680
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume6
Issue number4
DOIs
StatePublished - Jul 1988

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