Charge Plasma High Voltage PIN Diode Investigation

M. Jagadesh Kumar, Sara Hahmady, Richard Gale, Stephen Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we investigate the new approach on designing a high voltage PIN diode without introducing any doping into the silicon. The concept of charge plasma is basically using different metals with appropriate work-function as anode and cathode contacts, which cause the formation of "p" and "n" plasma regions in silicon respectively. We have used the Silvaco Atlas simulation to compare the forward and reverse I-V characteristics of the proposed device with the conventional PIN diode. Also, we looked at the temperature dependency of their reverse saturation current. We demonstrate that by using the charge plasma concept, the proposed CP-PIN diode and conventional PIN diode have identical characteristics.

Original languageEnglish
Title of host publication2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages117-121
Number of pages5
ISBN (Electronic)9781538654538
DOIs
StatePublished - Jun 2018
Event2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018 - Jackson, United States
Duration: Jun 3 2018Jun 7 2018

Publication series

Name2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018

Conference

Conference2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018
CountryUnited States
CityJackson
Period06/3/1806/7/18

Keywords

  • Charge Plasma
  • Doping-less
  • SOI PIN diode

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    Kumar, M. J., Hahmady, S., Gale, R., & Bayne, S. (2018). Charge Plasma High Voltage PIN Diode Investigation. In 2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018 (pp. 117-121). [8936701] (2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPMHVC.2018.8936701