@inproceedings{c7247d8e824d40c78247f0c28f67551f,
title = "Charge Plasma High Voltage PIN Diode Investigation",
abstract = "In this paper, we investigate the new approach on designing a high voltage PIN diode without introducing any doping into the silicon. The concept of charge plasma is basically using different metals with appropriate work-function as anode and cathode contacts, which cause the formation of {"}p{"} and {"}n{"} plasma regions in silicon respectively. We have used the Silvaco Atlas simulation to compare the forward and reverse I-V characteristics of the proposed device with the conventional PIN diode. Also, we looked at the temperature dependency of their reverse saturation current. We demonstrate that by using the charge plasma concept, the proposed CP-PIN diode and conventional PIN diode have identical characteristics.",
keywords = "Charge Plasma, Doping-less, SOI PIN diode",
author = "Kumar, {M. Jagadesh} and Sara Hahmady and Richard Gale and Stephen Bayne",
year = "2018",
month = jun,
doi = "10.1109/IPMHVC.2018.8936701",
language = "English",
series = "2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "117--121",
booktitle = "2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018",
note = "2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018 ; Conference date: 03-06-2018 Through 07-06-2018",
}