Characterization of Si3N4/Si(111) thin films by reflectance difference spectroscopy

Luis Felipe Lastras-Martínez; Nicolás Antonio Ulloa-Castillo; Rafael Herrera-Jasso; Raúl Eduardo Balderas-Navarro; Alfonso Lastras-Martínez; Mahesh Pandikunta; Oleg Ledyaev; Vladimir Kuryatkov; Sergey Nikishin

doi:10.7567/JJAP.54.021501

Characterization of Si₃N₄/Si(111) thin films by reflectance difference spectroscopy

Luis Felipe Lastras-Martínez, Nicolás Antonio Ulloa-Castillo, Rafael Herrera-Jasso, Raúl Eduardo Balderas-Navarro, Alfonso Lastras-Martínez, Mahesh Pandikunta, Oleg Ledyaev, Vladimir Kuryatkov, Sergey Nikishin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Si₃N₄ has become an important material with great technological and scientific interests. The lattice symmetry and the crystallinity quality of Si₃N₄ thin films are fundamental parameters that must be determined for different applications. In order to evaluate the properties of Si₃N₄ films, we used reflectance difference spectroscopy/reflectance anisotropy spectroscopy (RDS/RAS) to measure the optical anisotropy of Si₃N₄ thin films (1-2 nm) grown by nitridation of two different Si(111) substrates, one with a 4.2° miscut off towards the [112] direction and another one with a nonintentional miscut. We demonstrate that, by modifying the measurement optical setup, we could increase the RD sensitivity and clearly display the optical response corresponding to the hexagonal symmetry of the Si₃N₄ thin layer. Our results are in good agreement with reflection high energy electron diffraction (RHEED) measurements for both misoriented and oriented substrates.

Original language	English
Article number	021501
Journal	Japanese Journal of Applied Physics
Volume	54
Issue number	2
DOIs	https://doi.org/10.7567/JJAP.54.021501
State	Published - Feb 1 2015

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Lastras-Martínez, Luis Felipe ; Ulloa-Castillo, Nicolás Antonio ; Herrera-Jasso, Rafael ; Balderas-Navarro, Raúl Eduardo ; Lastras-Martínez, Alfonso ; Pandikunta, Mahesh ; Ledyaev, Oleg ; Kuryatkov, Vladimir ; Nikishin, Sergey. / Characterization of Si₃N₄/Si(111) thin films by reflectance difference spectroscopy. In: Japanese Journal of Applied Physics. 2015 ; Vol. 54, No. 2.

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abstract = "Si3N4 has become an important material with great technological and scientific interests. The lattice symmetry and the crystallinity quality of Si3N4 thin films are fundamental parameters that must be determined for different applications. In order to evaluate the properties of Si3N4 films, we used reflectance difference spectroscopy/reflectance anisotropy spectroscopy (RDS/RAS) to measure the optical anisotropy of Si3N4 thin films (1-2 nm) grown by nitridation of two different Si(111) substrates, one with a 4.2° miscut off towards the [112] direction and another one with a nonintentional miscut. We demonstrate that, by modifying the measurement optical setup, we could increase the RD sensitivity and clearly display the optical response corresponding to the hexagonal symmetry of the Si3N4 thin layer. Our results are in good agreement with reflection high energy electron diffraction (RHEED) measurements for both misoriented and oriented substrates.",

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Characterization of Si₃N₄/Si(111) thin films by reflectance difference spectroscopy. / Lastras-Martínez, Luis Felipe; Ulloa-Castillo, Nicolás Antonio; Herrera-Jasso, Rafael; Balderas-Navarro, Raúl Eduardo; Lastras-Martínez, Alfonso; Pandikunta, Mahesh; Ledyaev, Oleg; Kuryatkov, Vladimir; Nikishin, Sergey.

In: Japanese Journal of Applied Physics, Vol. 54, No. 2, 021501, 01.02.2015.

Research output: Contribution to journal › Article › peer-review

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AU - Ulloa-Castillo, Nicolás Antonio

AU - Herrera-Jasso, Rafael

AU - Balderas-Navarro, Raúl Eduardo

AU - Lastras-Martínez, Alfonso

AU - Pandikunta, Mahesh

AU - Ledyaev, Oleg

AU - Kuryatkov, Vladimir

AU - Nikishin, Sergey

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AB - Si3N4 has become an important material with great technological and scientific interests. The lattice symmetry and the crystallinity quality of Si3N4 thin films are fundamental parameters that must be determined for different applications. In order to evaluate the properties of Si3N4 films, we used reflectance difference spectroscopy/reflectance anisotropy spectroscopy (RDS/RAS) to measure the optical anisotropy of Si3N4 thin films (1-2 nm) grown by nitridation of two different Si(111) substrates, one with a 4.2° miscut off towards the [112] direction and another one with a nonintentional miscut. We demonstrate that, by modifying the measurement optical setup, we could increase the RD sensitivity and clearly display the optical response corresponding to the hexagonal symmetry of the Si3N4 thin layer. Our results are in good agreement with reflection high energy electron diffraction (RHEED) measurements for both misoriented and oriented substrates.

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