TY - JOUR
T1 - Characterization of Si3N4/Si(111) thin films by reflectance difference spectroscopy
AU - Lastras-Martínez, Luis Felipe
AU - Ulloa-Castillo, Nicolás Antonio
AU - Herrera-Jasso, Rafael
AU - Balderas-Navarro, Raúl Eduardo
AU - Lastras-Martínez, Alfonso
AU - Pandikunta, Mahesh
AU - Ledyaev, Oleg
AU - Kuryatkov, Vladimir
AU - Nikishin, Sergey
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/2/1
Y1 - 2015/2/1
N2 - Si3N4 has become an important material with great technological and scientific interests. The lattice symmetry and the crystallinity quality of Si3N4 thin films are fundamental parameters that must be determined for different applications. In order to evaluate the properties of Si3N4 films, we used reflectance difference spectroscopy/reflectance anisotropy spectroscopy (RDS/RAS) to measure the optical anisotropy of Si3N4 thin films (1-2 nm) grown by nitridation of two different Si(111) substrates, one with a 4.2° miscut off towards the [112] direction and another one with a nonintentional miscut. We demonstrate that, by modifying the measurement optical setup, we could increase the RD sensitivity and clearly display the optical response corresponding to the hexagonal symmetry of the Si3N4 thin layer. Our results are in good agreement with reflection high energy electron diffraction (RHEED) measurements for both misoriented and oriented substrates.
AB - Si3N4 has become an important material with great technological and scientific interests. The lattice symmetry and the crystallinity quality of Si3N4 thin films are fundamental parameters that must be determined for different applications. In order to evaluate the properties of Si3N4 films, we used reflectance difference spectroscopy/reflectance anisotropy spectroscopy (RDS/RAS) to measure the optical anisotropy of Si3N4 thin films (1-2 nm) grown by nitridation of two different Si(111) substrates, one with a 4.2° miscut off towards the [112] direction and another one with a nonintentional miscut. We demonstrate that, by modifying the measurement optical setup, we could increase the RD sensitivity and clearly display the optical response corresponding to the hexagonal symmetry of the Si3N4 thin layer. Our results are in good agreement with reflection high energy electron diffraction (RHEED) measurements for both misoriented and oriented substrates.
UR - http://www.scopus.com/inward/record.url?scp=84923163523&partnerID=8YFLogxK
U2 - 10.7567/JJAP.54.021501
DO - 10.7567/JJAP.54.021501
M3 - Article
AN - SCOPUS:84923163523
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
SN - 0021-4922
IS - 2
M1 - 021501
ER -