CHARACTERIZATION OF Si ELECTRODE-ELECTROLYTE INTERFACE UNDER THE ILLUMINATION.

Research output: Contribution to journalArticlepeer-review

Abstract

The flatband potential V//f//b capacitance of the n- and p-type Si electrode-electrolyte interface under illumination were measured. The dependences of the capacitance and V//f//b on the intensities of the incident light have been investigated.

Original languageEnglish
Pages (from-to)231-240
Number of pages10
JournalApplied physics communications
Volume5
Issue number4
StatePublished - Dec 1985

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