Abstract
The flatband potential V//f//b capacitance of the n- and p-type Si electrode-electrolyte interface under illumination were measured. The dependences of the capacitance and V//f//b on the intensities of the incident light have been investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 231-240 |
| Number of pages | 10 |
| Journal | Applied physics communications |
| Volume | 5 |
| Issue number | 4 |
| State | Published - Dec 1985 |