Characterization of annealed HPSI 4H-SiC for photoconductive semiconductor switches

Cameron Hettler, W. W. Sullivan, J. Dickens

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Annealing of high purity semi-insulating (HPSI) 4H-SiC is investigated as a method to improve bulk photoconductive semiconductor switches through recombination lifetime modification. Five samples of HPSI 4H-SiC were annealed at 1810 °C for lengths of time ranging from 3 to 300 minutes. The recombination lifetime of the unannealed and annealed samples was measured using a contactless microwave photoconductivity decay (MPCD) system. The MPCD system consists of a 35 GHz continuous microwave probe and a tripled Nd:YAG pulsed laser. The recombination lifetime was increased from 6 ns, as received, up to 185 ns by annealing for 300 minutes. To experimentally verify switch improvements, identical switches from unannealed and annealed material were fabricated and tested at low voltage. The unannealed device generated a 15 ns pulse with a 2 ns rise-time. The annealed device conducted for upwards of 300 ns with a comparable 2 ns rise-time. The increased recombination lifetime resulted in lower on-state resistance and increased energy transfer.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
EditorsRobert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
PublisherTrans Tech Publications Ltd
Pages301-304
Number of pages4
ISBN (Print)9783037854198
DOIs
StatePublished - 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period09/11/1109/16/11

Keywords

  • Microwave photoconductivity decay
  • Photoconductive semiconductor switch
  • Recombination lifetime

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    Hettler, C., Sullivan, W. W., & Dickens, J. (2012). Characterization of annealed HPSI 4H-SiC for photoconductive semiconductor switches. In R. P. Devaty, M. Dudley, T. P. Chow, & P. G. Neudeck (Eds.), Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 301-304). (Materials Science Forum; Vol. 717-720). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.717-720.301