Characterization of an n-Type 4-kV GTO for Pulsed Power Applications

Tyler Flack, Cameron Hettler, Stephen Bayne

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


This paper details the experimental evaluation and simulation of a 4-kV n-type gate turn-OFF thyristor (GTO) designed for pulsed power applications. The primary criteria of evaluation are rate of current rise ( dI/dt ), turn-ON delay time ( TD), and resistance of the device during turn-ON transients [ RON(t)]. The device under test (DuT) is an n-type asymmetric-blocking GTO manufactured by Silicon Power (Part No. 14N40A10) with a rated dc blocking voltage of 4 kV. A test circuit was specifically designed to minimize stray inductance in order to capitalize on the dI/dt capabilities of the DuT. Experimental data collected from resistance measurements are used to develop a single-switch approximate model for use in simulation. The results of dI/dt experiments provide a profile of DuT dI/dt operation beyond rated values; specifically dI/dt values >70 kA/μs were readily achieved. The turn-ON delay time of the DuT is also characterized and determined to be ∼ 225 ns on average.

Original languageEnglish
Article number7470502
Pages (from-to)1947-1955
Number of pages9
JournalIEEE Transactions on Plasma Science
Issue number10
StatePublished - Oct 2016


  • Pulsed power systems
  • semiconductor device testing
  • thyristors


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