Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360 nm: Photoemission assessments

A. BenMoussa, J. F. Hochedez, R. Dahal, J. Li, Jingyu Lin, Hongxing Jiang, A. Soltani, J. C. De Jaeger, U. Kroth, M. Richter

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)022108
JournalAppl. Phys. Lett.
StatePublished - Jan 15 2008

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    BenMoussa, A., Hochedez, J. F., Dahal, R., Li, J., Lin, J., Jiang, H., Soltani, A., Jaeger, J. C. D., Kroth, U., & Richter, M. (2008). Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360 nm: Photoemission assessments. Appl. Phys. Lett., 022108.