Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360 nm: Photoemission assessments

A. BenMoussa; J. F. Hochedez; R. Dahal; J. Li; Jingyu Lin; Hongxing Jiang; A. Soltani; J. C. De Jaeger; U. Kroth; M. Richter

Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360 nm: Photoemission assessments

A. BenMoussa, J. F. Hochedez, R. Dahal, J. Li, Jingyu Lin, Hongxing Jiang, A. Soltani, J. C. De Jaeger, U. Kroth, M. Richter

Electrical and Computer Engineering

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	022108
Journal	Appl. Phys. Lett.
State	Published - Jan 15 2008

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BenMoussa, A., Hochedez, J. F., Dahal, R., Li, J., Lin, J., Jiang, H., Soltani, A., Jaeger, J. C. D., Kroth, U., & Richter, M. (2008). Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360 nm: Photoemission assessments. Appl. Phys. Lett., 022108.

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author = "A. BenMoussa and Hochedez, {J. F.} and R. Dahal and J. Li and Jingyu Lin and Hongxing Jiang and A. Soltani and Jaeger, {J. C. De} and U. Kroth and M. Richter",

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AU - BenMoussa, A.

AU - Hochedez, J. F.

AU - Dahal, R.

AU - Li, J.

AU - Lin, Jingyu

AU - Jiang, Hongxing

AU - Soltani, A.

AU - Jaeger, J. C. De

AU - Kroth, U.

AU - Richter, M.

PY - 2008/1/15

Y1 - 2008/1/15

M3 - Article

SP - 022108

JO - Appl. Phys. Lett.

JF - Appl. Phys. Lett.

ER -