Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44-360 nm: Photoemission assessments

A. BenMoussa, J. F. Hochedez, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang, A. Soltani, J. C. De Jaeger, U. Kroth, M. Richter

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

The absolute responsivity of a metal-semiconductor-metal (MSM) photodiode based on high quality AlN material has been tested from the vacuum ultraviolet (vuv) to the near UV wavelength range (44-360 nm). The metal finger Schottky contacts have been processed to 2 μm in width with spacing between the contacts of 4 μm. In the vuv wavelength region, the measurement methodology is described in order to distinguish the contribution of the photoemission current from the internal diode signal. In the wavelength range of interest, AlN MSM is sensitive and stable under brief vuv irradiation. The MSM shows a 200360 nm rejection ratio of more than four orders of magnitude and demonstrates the advantages of wide band gap material based detectors in terms of high rejection ratio and high output signal for vuv solar observation missions.

Original languageEnglish
Article number022108
JournalApplied Physics Letters
Volume92
Issue number2
DOIs
StatePublished - 2008

Fingerprint Dive into the research topics of 'Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44-360 nm: Photoemission assessments'. Together they form a unique fingerprint.

Cite this