Characterization of a non-chemically amplified resist for photomask fabrication using a 257 nm optical pattern generator

Benjamen M. Rathsack, Cyrus E. Tabery, Timothy B. Stachowiak, Tim Dallas, Cheng Bai Xu, Mike Pochkowski, C. Grant Willson

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Simulation and resist characterization was done to demonstrate that a non-chemically amplified resist can be used for 257 nm mask lithography. Resist characterization was used to optimize the optical transparency, extent of PAC bleaching, PAC photospeed and dissolution contrast performance tradeoffs. Formulations of the 2, 1, 4 DNQ based resists were characterized by extracting exposure and development rate parameters. The characterization of the 2, 1, 4 DNQ PAC in a novolak resin showed that these resist materials have acceptable bleaching and dissolution properties for the formulation of a non-chemically amplified resist for 257 nm mask optical pattern generators.

Original languageEnglish
Pages (from-to)80-92
Number of pages13
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3873
Issue numberpt 1
DOIs
StatePublished - 1999
Event19th Annual BACUS Symposium on Photomask Technology - Monterey, CA, USA
Duration: Sep 15 1999Sep 17 1999

Fingerprint

Dive into the research topics of 'Characterization of a non-chemically amplified resist for photomask fabrication using a 257 nm optical pattern generator'. Together they form a unique fingerprint.

Cite this