Simulation and resist characterization was done to demonstrate that a non-chemically amplified resist can be used for 257 nm mask lithography. Resist characterization was used to optimize the optical transparency, extent of PAC bleaching, PAC photospeed and dissolution contrast performance tradeoffs. Formulations of the 2, 1, 4 DNQ based resists were characterized by extracting exposure and development rate parameters. The characterization of the 2, 1, 4 DNQ PAC in a novolak resin showed that these resist materials have acceptable bleaching and dissolution properties for the formulation of a non-chemically amplified resist for 257 nm mask optical pattern generators.
|Number of pages||13|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|Issue number||pt 1|
|State||Published - 1999|
|Event||19th Annual BACUS Symposium on Photomask Technology - Monterey, CA, USA|
Duration: Sep 15 1999 → Sep 17 1999