TY - JOUR
T1 - Changes in VO2 band structure induced by charge localization and surface segregation
AU - Chen, Changhong
AU - Fan, Zhaoyang
N1 - Funding Information:
This work was partially supported by WNLO innovation under Grant No. P080004. The authors thank Dr. Tim Dallas for editing the manuscript.
PY - 2009
Y1 - 2009
N2 - Vanadium vacancies introduce acceptor doping with hole localization, while oxygen vacancies cause electron localization and donor doping. As deposition temperature increases, donor concentration stays constant, whereas acceptor concentration significantly increases, leading to enhanced (011) lattice-plane compression and surface segregation. Localized charges result in shifts of O 1s and V4+ 2p core levels toward higher binding energies, and O 2p and V4+ 3d valence bands toward the Fermi level, but eg π bands lifting and a1g bands splitting energies are both insensitive to charge localization. Particularly, band-gap energy decreases with increasing V-V pair distance, and is significantly reduced by band tailing.
AB - Vanadium vacancies introduce acceptor doping with hole localization, while oxygen vacancies cause electron localization and donor doping. As deposition temperature increases, donor concentration stays constant, whereas acceptor concentration significantly increases, leading to enhanced (011) lattice-plane compression and surface segregation. Localized charges result in shifts of O 1s and V4+ 2p core levels toward higher binding energies, and O 2p and V4+ 3d valence bands toward the Fermi level, but eg π bands lifting and a1g bands splitting energies are both insensitive to charge localization. Particularly, band-gap energy decreases with increasing V-V pair distance, and is significantly reduced by band tailing.
UR - http://www.scopus.com/inward/record.url?scp=73649100625&partnerID=8YFLogxK
U2 - 10.1063/1.3280375
DO - 10.1063/1.3280375
M3 - Article
AN - SCOPUS:73649100625
SN - 0003-6951
VL - 95
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 26
M1 - 262106
ER -