Carrier-population dynamics in group III-nitride quantum well laser structures

W. W. Chow, K. C. Zeng, R. Mair, J. Y. Lin, H. X. Jiang

Research output: Contribution to conferencePaper

Abstract

Experiment performed on a 10 period GaN/Al0.07Ga0.93N quantum well structure suggests that the ratio of unconfined to confined band contribution to the photoluminescence varies from 10% to 40% when the pump intensity is increased by an order of magnitude. To understand these processes, the dynamics of carrier transport from the barrier to the well regions was probed using picosecond time-resolved PL spectroscopy at different pumping intensities and temperatures. The spectral data were analyzed, thus determining the time evolution of the carrier distributions.

Original languageEnglish
Pages282-283
Number of pages2
DOIs
StatePublished - 1998
EventProceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO - San Francisco, CA, USA
Duration: May 3 1998May 8 1998

Conference

ConferenceProceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO
CitySan Francisco, CA, USA
Period05/3/9805/8/98

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    Chow, W. W., Zeng, K. C., Mair, R., Lin, J. Y., & Jiang, H. X. (1998). Carrier-population dynamics in group III-nitride quantum well laser structures. 282-283. Paper presented at Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO, San Francisco, CA, USA, . https://doi.org/10.1109/cleo.1998.676171