Carrier-population dynamics in group III-nitride quantum well laser structures

W. W. Chow; K. C. Zeng; R. Mair; J. Y. Lin; H. X. Jiang

doi:10.1109/cleo.1998.676171

Carrier-population dynamics in group III-nitride quantum well laser structures

W. W. Chow, K. C. Zeng, R. Mair, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Experiment performed on a 10 period GaN/Al_0.07Ga_0.93N quantum well structure suggests that the ratio of unconfined to confined band contribution to the photoluminescence varies from 10% to 40% when the pump intensity is increased by an order of magnitude. To understand these processes, the dynamics of carrier transport from the barrier to the well regions was probed using picosecond time-resolved PL spectroscopy at different pumping intensities and temperatures. The spectral data were analyzed, thus determining the time evolution of the carrier distributions.

Original language	English
Pages	282-283
Number of pages	2
DOIs	https://doi.org/10.1109/cleo.1998.676171
State	Published - 1998
Event	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO - San Francisco, CA, USA Duration: May 3 1998 → May 8 1998

Conference

Conference	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO
City	San Francisco, CA, USA
Period	05/3/98 → 05/8/98

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10.1109/cleo.1998.676171

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title = "Carrier-population dynamics in group III-nitride quantum well laser structures",

abstract = "Experiment performed on a 10 period GaN/Al0.07Ga0.93N quantum well structure suggests that the ratio of unconfined to confined band contribution to the photoluminescence varies from 10% to 40% when the pump intensity is increased by an order of magnitude. To understand these processes, the dynamics of carrier transport from the barrier to the well regions was probed using picosecond time-resolved PL spectroscopy at different pumping intensities and temperatures. The spectral data were analyzed, thus determining the time evolution of the carrier distributions.",

author = "Chow, {W. W.} and Zeng, {K. C.} and R. Mair and Lin, {J. Y.} and Jiang, {H. X.}",

year = "1998",

doi = "10.1109/cleo.1998.676171",

language = "English",

pages = "282--283",

note = "null ; Conference date: 03-05-1998 Through 08-05-1998",

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T1 - Carrier-population dynamics in group III-nitride quantum well laser structures

AU - Chow, W. W.

AU - Zeng, K. C.

AU - Mair, R.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 1998

Y1 - 1998

N2 - Experiment performed on a 10 period GaN/Al0.07Ga0.93N quantum well structure suggests that the ratio of unconfined to confined band contribution to the photoluminescence varies from 10% to 40% when the pump intensity is increased by an order of magnitude. To understand these processes, the dynamics of carrier transport from the barrier to the well regions was probed using picosecond time-resolved PL spectroscopy at different pumping intensities and temperatures. The spectral data were analyzed, thus determining the time evolution of the carrier distributions.

AB - Experiment performed on a 10 period GaN/Al0.07Ga0.93N quantum well structure suggests that the ratio of unconfined to confined band contribution to the photoluminescence varies from 10% to 40% when the pump intensity is increased by an order of magnitude. To understand these processes, the dynamics of carrier transport from the barrier to the well regions was probed using picosecond time-resolved PL spectroscopy at different pumping intensities and temperatures. The spectral data were analyzed, thus determining the time evolution of the carrier distributions.

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U2 - 10.1109/cleo.1998.676171

DO - 10.1109/cleo.1998.676171

M3 - Paper

AN - SCOPUS:0031637772

SP - 282

EP - 283

Y2 - 3 May 1998 through 8 May 1998

ER -

Carrier-population dynamics in group III-nitride quantum well laser structures

Abstract

Conference

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