Carrier lifetime studies of semi-insulating silicon carbide for photoconductive switch applications

C. Hettler, C. James, J. Dickens, A. Neuber

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

A contactless microwave photoconductivity decay (MPCD) method has been used to measure recombination lifetime and relative conductivity of semi-insulating (SI) silicon carbide (SiC) wafers. A pulsed laser, tunable from 210 nm to 2 m, has been used to probe above and below band gap photoconductive responses of four SI SiC wafers. The carrier lifetimes were calculated by comparing the reflected microwave signal to the photo response of a fast (<300 ps) photodiode. Three vanadium-doped 6H-SiC wafers, with bulk resistivities ranging from 105 Ω-cm to 1011 Ω-cm, and one high-purity semi-insulating (HPSI) 4H-SiC wafer (>109 Ω-cm) were studied. The photoconductive response of each wafer set is presented. The HPSI wafer demonstrated longer carrier lifetime and improved above band gap photoconductivity compared to the vanadium-doped wafers. The difference in carrier lifetimes are attributed to higher densities of recombination centers (vanadium acceptors) in the 6H-SiC substrates.

Original languageEnglish
Title of host publicationProceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
Pages34-37
Number of pages4
DOIs
StatePublished - Dec 1 2010
Event2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010 - Atlanta, GA, United States
Duration: May 23 2010May 27 2010

Publication series

NameProceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010

Conference

Conference2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
CountryUnited States
CityAtlanta, GA
Period05/23/1005/27/10

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Keywords

  • carrier lifetime
  • photoconductive switching
  • recombination lifetime
  • semi-insulating
  • silicon carbide

Cite this

Hettler, C., James, C., Dickens, J., & Neuber, A. (2010). Carrier lifetime studies of semi-insulating silicon carbide for photoconductive switch applications. In Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010 (pp. 34-37). [5958289] (Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010). https://doi.org/10.1109/IPMHVC.2010.5958289