Carrier lifetime measurement of silicon carbide for photoconductive switch applications using an IR probe laser

Chris White, Daniel Mauch, David Thomas, James Dickens

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A system for measuring the recombination lifetime of high purity, semi-insulating (HPSI) 4H-SiC through transient free carrier absorption (FCA) for optimization of SiC photoconductive semiconductor switches (PCSS) is presented. The system measures the transient absorption of a continuous, low-power (<5mW) 1550 nm infrared probe laser. Free carriers were generated with both above and below bandgap illumination from the harmonics of a Nd: YAG laser (532 nm, 355 nm, and 266 nm-10ns FWHM), and the carrier lifetime was numerically calculated from the absorption transient. High spatial resolution (∼10 um) was attained through the use of a high-precision, three-axis stage. The carrier lifetime measurements of various regions of several SiC PCSSs over varying levels of photo-excitation are presented.

Original languageEnglish
Title of host publicationProceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
EditorsAllen L. Garner
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages527-529
Number of pages3
ISBN (Electronic)9781467373234
DOIs
StatePublished - Oct 1 2015
EventIEEE International Power Modulator and High Voltage Conference, IPMHVC 2014 - Santa Fe, United States
Duration: Jun 1 2014Jun 5 2014

Publication series

NameProceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014

Conference

ConferenceIEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
Country/TerritoryUnited States
CitySanta Fe
Period06/1/1406/5/14

Keywords

  • PCSS
  • TFCA

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