TY - GEN
T1 - Carrier lifetime measurement of silicon carbide for photoconductive switch applications using an IR probe laser
AU - White, Chris
AU - Mauch, Daniel
AU - Thomas, David
AU - Dickens, James
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014
Y1 - 2014
N2 - A system for measuring the recombination lifetime of high purity, semi-insulating (HPSI) 4H-SiC through transient free carrier absorption (FCA) for optimization of SiC photoconductive semiconductor switches (PCSS) is presented. The system measures the transient absorption of a continuous, low-power (<5mW) 1550 nm infrared probe laser. Free carriers were generated with both above and below bandgap illumination from the harmonics of a Nd: YAG laser (532 nm, 355 nm, and 266 nm-10ns FWHM), and the carrier lifetime was numerically calculated from the absorption transient. High spatial resolution (∼10 um) was attained through the use of a high-precision, three-axis stage. The carrier lifetime measurements of various regions of several SiC PCSSs over varying levels of photo-excitation are presented.
AB - A system for measuring the recombination lifetime of high purity, semi-insulating (HPSI) 4H-SiC through transient free carrier absorption (FCA) for optimization of SiC photoconductive semiconductor switches (PCSS) is presented. The system measures the transient absorption of a continuous, low-power (<5mW) 1550 nm infrared probe laser. Free carriers were generated with both above and below bandgap illumination from the harmonics of a Nd: YAG laser (532 nm, 355 nm, and 266 nm-10ns FWHM), and the carrier lifetime was numerically calculated from the absorption transient. High spatial resolution (∼10 um) was attained through the use of a high-precision, three-axis stage. The carrier lifetime measurements of various regions of several SiC PCSSs over varying levels of photo-excitation are presented.
KW - PCSS
KW - TFCA
UR - http://www.scopus.com/inward/record.url?scp=84947081098&partnerID=8YFLogxK
U2 - 10.1109/IPMHVC.2014.7287328
DO - 10.1109/IPMHVC.2014.7287328
M3 - Conference contribution
AN - SCOPUS:84947081098
T3 - Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
SP - 527
EP - 529
BT - Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
A2 - Garner, Allen L.
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
Y2 - 1 June 2014 through 5 June 2014
ER -