Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

Q. Wang, R. Hui, R. Dahal, J. Y. Lin, H. X. Jiang

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17 Scopus citations


We report the characteristics of an erbium-doped GaN semiconductor waveguide amplifier grown by metal-organic chemical vapor deposition. We demonstrated that both 980 and 1480 nm optical pumping were efficient to create population inversion between the I4 13/2 and I4 15/2 energy levels. The carrier lifetime in the I4 13/2 energy band was measured to be approximately 1.5 ms in room temperature, which is slightly shorter than that in erbium-doped silica due to the interaction between the erbium ions and the semiconductor lattice structure. But it is significantly longer than the carrier lifetime in a typical semiconductor optical amplifier which is in the nanosecond regime.

Original languageEnglish
Article number241105
JournalApplied Physics Letters
Issue number24
StatePublished - Dec 13 2010


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