TY - JOUR
T1 - Calculations of the temperature and field dependent electronic mobility in β-SiC
AU - Joshi, R. P.
AU - Ferry, D. K.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1995/11
Y1 - 1995/11
N2 - Simulations results of the field- and temperature-dependent electronic conductivity in β-SiC are reported. The calculations based on the Monte Carlo procedure, reveal a velocity overshoot above 100 kV/cm for a 1.0 μm device at 300 K with a characteristic response time of about 0.3 ps. The steady state velocity at 900 K is shown to be in excess of 107 cm/s. Frequency behaviour of the complex small signal mobility has also been calculated at different temperatures and biasing fields. The real part of the a.c. mobility exhibits a peak at frequencies close to the relaxation rates, provided the transient velocity for the corresponding bias field has an overshoot. Finally, it has been shown that with device down scaling, the a.c. mobilities can be appreciably reduced, and that the device electron velocities substantially lowered due to carrier injection at the cathode.
AB - Simulations results of the field- and temperature-dependent electronic conductivity in β-SiC are reported. The calculations based on the Monte Carlo procedure, reveal a velocity overshoot above 100 kV/cm for a 1.0 μm device at 300 K with a characteristic response time of about 0.3 ps. The steady state velocity at 900 K is shown to be in excess of 107 cm/s. Frequency behaviour of the complex small signal mobility has also been calculated at different temperatures and biasing fields. The real part of the a.c. mobility exhibits a peak at frequencies close to the relaxation rates, provided the transient velocity for the corresponding bias field has an overshoot. Finally, it has been shown that with device down scaling, the a.c. mobilities can be appreciably reduced, and that the device electron velocities substantially lowered due to carrier injection at the cathode.
UR - http://www.scopus.com/inward/record.url?scp=0029406137&partnerID=8YFLogxK
U2 - 10.1016/0038-1101(95)00004-D
DO - 10.1016/0038-1101(95)00004-D
M3 - Article
AN - SCOPUS:0029406137
VL - 38
SP - 1911
EP - 1916
JO - Solid State Electronics
JF - Solid State Electronics
SN - 0038-1101
IS - 11
ER -