Calculations of the neutral and charged states of the {H,C} pair in silicon

Y. Zhou, R. Luchsinger, P. F. Meier, H. U. Suter, Dj Maric, S. K. Estreicher

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

We have performed systematic studies of the {H,C} pair in Si with molecular clusters and supercells at various levels of Hartree-Fock, post Hartree-Fock, and density functional theory, within and beyond the local density approximation. We found that, in this particular case, electron correlation plays an important role in determining the equilibrium structure. For both {H,C}0 and {H,C}+ states, the bond-centered configuration C-H···Si is the most stable while the H-C···Si configuration is stable in the -1 charge state. The electronic structures and metastable states are also discussed.

Original languageEnglish
Pages (from-to)891-896
Number of pages6
JournalMaterials Science Forum
Volume196-201
Issue numberpt 2
DOIs
StatePublished - 1995
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: Jul 23 1995Jul 28 1995

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