Calculations of hole transport characteristics in bulk GaSb with comparisons to GaAs

P. Damayanthi, R. P. Joshi, J. A. McAdoo

Research output: Contribution to journalReview article

1 Scopus citations

Abstract

Field dependent drift velocity results are presented for hole transport in bulk gallium antimonide material based on a Monte Carlo model which includes energy band warping. Transient drift velocities are demonstrated to be higher than for gallium arsenide. The steady-state characteristics are also shown to be superior. The material appears to have potential for high-speed photodetection.

Original languageEnglish
Pages (from-to)817-821
Number of pages5
JournalJournal of Applied Physics
Volume88
Issue number2
DOIs
StatePublished - Jul 15 2000

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