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Calculating the properties of defects in semiconductors at finite temperatures
Stefan K. Estreicher,
Mahdi Sanati
Physics
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Dive into the research topics of 'Calculating the properties of defects in semiconductors at finite temperatures'. Together they form a unique fingerprint.
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Engineering & Materials Science
Activation energy
39%
Charge density
52%
Crystals
37%
Defects
77%
Density functional theory
56%
Electric properties
40%
Entropy
31%
Free energy
89%
Geometry
22%
Ground state
56%
Impurities
36%
Semiconductor materials
100%
Temperature
45%
Chemistry
Charge Density
54%
Density Functional Theory
35%
Electrical Property
47%
Electron Spin
47%
Entropy
46%
Gibbs Free Energy
85%
Ground State
44%
Semiconductor
85%
Volume
32%
Zero Point Energy
75%
Physics & Astronomy
activation energy
27%
configurations
20%
crystals
18%
defects
62%
density functional theory
28%
electrical properties
27%
electronics
19%
entropy
27%
free energy
61%
geometry
21%
ground state
24%
impurities
24%
predictions
20%
temperature
33%
vibration mode
34%
zero point energy
48%