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C4 defect and its precursors in Si: First-principles theory
D. J. Backlund, S. K. Estreicher
Physics
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peer-review
21
Scopus citations
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Engineering & Materials Science
Defects
65%
Binding energy
50%
Vibrational spectra
50%
Carbon
47%
Optical properties
39%
Magnetic properties
38%
Electric properties
33%
Irradiation
32%
Oxygen
25%
Temperature
12%
Chemistry
Interstitial
100%
Vibrational Spectrum
45%
Carbon Atom
44%
Binding Energy
41%
Electrical Property
39%
Magnetic Property
38%
Optical Property
34%
Ambient Reaction Temperature
26%
Dioxygen
23%
Physics & Astronomy
interstitials
81%
defects
52%
configurations
25%
carbon
21%
vibrational spectra
17%
vibration mode
14%
binding energy
13%
traps
11%
electrical properties
11%
magnetic properties
11%
optical properties
10%
irradiation
10%
oxygen
9%
room temperature
8%