Bulk AlN crystal growth by direct heating of the source using microwaves

D. Zhuang, J. H. Edgar, B. Liu, H. E. Huey, H. X. Jiang, J. Y. Lin, M. Kuball, F. Mogal, J. Chaudhuri, Z. Rek

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19 Scopus citations

Abstract

AlN single crystal platelets up to 2 × 3 mm2 and needles 1mm in diameter and 3mm in length were successfully grown by directly heating the source materials with microwaves. The process temperature was over 2000°C and the pressure was kept constant at 910 Torr. The growth rate was typically 300 μm h-1 in the c-direction. An emission around 5.5 eV was observed in the photoluminescence spectrum probably caused by magnesium impurity. The dislocation density was low, 6 × 103 cm -2, as determined by both synchrotron white beam X-ray topography and etching in molten potassium hydroxide-sodium hydroxide eutectic alloy. Etching produced hexagonal pits and hexagonal hillocks on the Al- and N-polar surfaces, respectively. Raman spectra, X-ray topograph, and etch pit densities demonstrate that the crystals have good structural quality.

Original languageEnglish
Pages (from-to)168-174
Number of pages7
JournalJournal of Crystal Growth
Volume262
Issue number1-4
DOIs
StatePublished - Feb 15 2004

Keywords

  • A1. Characterization
  • A1. Etching
  • A1. X-ray topography
  • A2. Single crystal growth
  • B1. Nitrides

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