Abstract
AlN single crystal platelets up to 2 × 3 mm2 and needles 1mm in diameter and 3mm in length were successfully grown by directly heating the source materials with microwaves. The process temperature was over 2000°C and the pressure was kept constant at 910 Torr. The growth rate was typically 300 μm h-1 in the c-direction. An emission around 5.5 eV was observed in the photoluminescence spectrum probably caused by magnesium impurity. The dislocation density was low, 6 × 103 cm -2, as determined by both synchrotron white beam X-ray topography and etching in molten potassium hydroxide-sodium hydroxide eutectic alloy. Etching produced hexagonal pits and hexagonal hillocks on the Al- and N-polar surfaces, respectively. Raman spectra, X-ray topograph, and etch pit densities demonstrate that the crystals have good structural quality.
Original language | English |
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Pages (from-to) | 168-174 |
Number of pages | 7 |
Journal | Journal of Crystal Growth |
Volume | 262 |
Issue number | 1-4 |
DOIs | |
State | Published - Feb 15 2004 |
Keywords
- A1. Characterization
- A1. Etching
- A1. X-ray topography
- A2. Single crystal growth
- B1. Nitrides